HGTG30N60B3D
onsemi
onsemi
IGBT 600V 60A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$6.81000
10+
$6.15000
450+
$4.86304
900+
$4.43396
1,350+
$3.86184
Exquisite packaging
Discount
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Discover the HGTG30N60B3D Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGTG30N60B3D ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGTG30N60B3D for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 220 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 208 W
- Switching Energy: 550µJ (on), 680µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 36ns/137ns
- Test Condition: 480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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