HGTP10N40E1
Harris Corporation
Harris Corporation
10A, 400V, N-CHANNEL IGBT
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The HGTP10N40E1 by Harris Corporation is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTP10N40E1 delivers robust performance. Harris Corporation's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTP10N40E1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 17.5 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Power - Max: 60 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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