HGTP20N60A4
onsemi
onsemi
IGBT 600V 70A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$3.99000
10+
$3.59600
100+
$2.96880
800+
$2.54585
1,600+
$2.16668
Exquisite packaging
Discount
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Discover the HGTP20N60A4 Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGTP20N60A4 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGTP20N60A4 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 280 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
- Power - Max: 290 W
- Switching Energy: 105µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 15ns/73ns
- Test Condition: 390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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