HGTP7N60A4-F102
onsemi
onsemi
IGBT 600V 34A TO220-3
$0.00
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Reference Price (USD)
800+
$1.55636
Exquisite packaging
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Optimize your power systems with the HGTP7N60A4-F102 Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the HGTP7N60A4-F102 delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 34 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
- Power - Max: 125 W
- Switching Energy: 55µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 60 nC
- Td (on/off) @ 25°C: 11ns/100ns
- Test Condition: 390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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