HN2D01JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE ARRAY GP 80V 100MA ESV
$0.44
Available to order
Reference Price (USD)
4,000+
$0.08820
8,000+
$0.08330
12,000+
$0.07595
28,000+
$0.07105
100,000+
$0.06860
Exquisite packaging
Discount
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The HN2D01JE(TE85L,F) from Toshiba Semiconductor and Storage sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Toshiba Semiconductor and Storage's rigorous quality control ensures the HN2D01JE(TE85L,F) maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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