HN2D03F(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE ARRAY GP 400V 100MA SM6
$0.64
Available to order
Reference Price (USD)
3,000+
$0.20460
6,000+
$0.19140
15,000+
$0.18480
Exquisite packaging
Discount
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The HN2D03F(TE85L,F) from Toshiba Semiconductor and Storage sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Toshiba Semiconductor and Storage's rigorous quality control ensures the HN2D03F(TE85L,F) maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 3 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 400 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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