HUF75337P3
Harris Corporation
Harris Corporation
MOSFET N-CH 55V 75A TO220-3
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
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Upgrade your designs with the HUF75337P3 by Harris Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the HUF75337P3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1775 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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