HUF75339G3
Fairchild Semiconductor
        
                
                                Fairchild Semiconductor                            
                        
                                MOSFET N-CH 55V 75A TO247-3                            
                        $1.04
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.04000
                                        500+
                                            $1.0296
                                        1000+
                                            $1.0192
                                        1500+
                                            $1.0088
                                        2000+
                                            $0.9984
                                        2500+
                                            $0.988
                                        Exquisite packaging
                            Discount
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                    The HUF75339G3 single MOSFET from Fairchild Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the HUF75339G3 is a must-have in the Transistors - FETs, MOSFETs - Single category.                
            Specifications
- Product Status: Obsolete
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 55 V
 - Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 10V
 - Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
 - FET Feature: -
 - Power Dissipation (Max): 200W (Tc)
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-247
 - Package / Case: TO-247-3
 
