NX7002BKMBYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 350MA DFN1006B-3
$0.35
Available to order
Reference Price (USD)
10,000+
$0.05512
30,000+
$0.05226
50,000+
$0.04940
100,000+
$0.04454
250,000+
$0.04368
Exquisite packaging
Discount
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Meet the NX7002BKMBYL by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NX7002BKMBYL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 3.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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