IAUA250N04S6N006AUMA1
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V) PG-HSOF-5
$4.42
Available to order
Reference Price (USD)
1+
$4.42000
500+
$4.3758
1000+
$4.3316
1500+
$4.2874
2000+
$4.2432
2500+
$4.199
Exquisite packaging
Discount
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Enhance your electronic projects with the IAUA250N04S6N006AUMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IAUA250N04S6N006AUMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3V @ 145µA
- Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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