IAUC50N08S5N102ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TDSON-8
$0.71
Available to order
Reference Price (USD)
1+
$0.70940
500+
$0.702306
1000+
$0.695212
1500+
$0.688118
2000+
$0.681024
2500+
$0.67393
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IAUC50N08S5N102ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IAUC50N08S5N102ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 24µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTMFS08N2D5C
Diodes Incorporated
DMN3016LFDF-7-90
Diodes Incorporated
DMN3016LPS-13
Vishay Siliconix
SIHD14N60ET1-GE3
Rohm Semiconductor
SCT2160KEHRC11
Toshiba Semiconductor and Storage
SSM5N16FU,LF
Panjit International Inc.
PJT7413_S1_00001
Nexperia USA Inc.
PSMN8R7-100YSFQ
onsemi
NTD4909NAT4H
Renesas Electronics America Inc