IAUC60N06S5L073ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_)40V 60V) PG-TDSON-8
$0.64
Available to order
Reference Price (USD)
1+
$0.63520
500+
$0.628848
1000+
$0.622496
1500+
$0.616144
2000+
$0.609792
2500+
$0.60344
Exquisite packaging
Discount
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Optimize your power electronics with the IAUC60N06S5L073ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IAUC60N06S5L073ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 19µA
- Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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