IAUZ40N06S5N105ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_)40V 60V) PG-TSDSON-8
$0.44
Available to order
Reference Price (USD)
1+
$0.44120
500+
$0.436788
1000+
$0.432376
1500+
$0.427964
2000+
$0.423552
2500+
$0.41914
Exquisite packaging
Discount
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The IAUZ40N06S5N105ATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IAUZ40N06S5N105ATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
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