IPA60R600P7SE8228XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 6A TO220
$0.80
Available to order
Reference Price (USD)
500+
$0.59816
Exquisite packaging
Discount
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The IPA60R600P7SE8228XKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPA60R600P7SE8228XKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 21W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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