IGC18T120T8QX1SA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 15A DIE
$0.00
Available to order
Reference Price (USD)
1+
$4.37000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IGC18T120T8QX1SA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IGC18T120T8QX1SA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IGC18T120T8QX1SA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Infineon Technologies
SIGC14T60NCX1SA1
Infineon Technologies
SIGC10T60EX7SA3
Littelfuse Inc.
LGB8245TI
onsemi
NGD18N45CLBT4G
IXYS
IXGA30N60C3
Infineon Technologies
SIGC25T60UNX7SA1
Littelfuse Inc.
SGD8290NT4G
Infineon Technologies
IRG7CH81K10EF-R
Infineon Technologies
IEWS20R5135IPBXKLA1
Infineon Technologies