IGC36T120T8LX1SA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 35A DIE
$0.00
Available to order
Reference Price (USD)
1+
$7.20000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IGC36T120T8LX1SA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IGC36T120T8LX1SA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IGC36T120T8LX1SA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 35A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
onsemi
PCG20N60A4W
Infineon Technologies
IRGC75B60KB
Infineon Technologies
IKA15N65ET6XKSA1
onsemi
SHGTG40N60A4
Infineon Technologies
IRG4BAC50W-SPBF
Infineon Technologies
IGC99T120T8RQX7SA1
Harris Corporation
HGT1S3N60B3DS
Littelfuse Inc.
LGS8206AUI
Infineon Technologies
IGC11T60TEX7SA1
Infineon Technologies