IGP01N120H2XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 3.2A 28W TO220-3
$0.55
Available to order
Reference Price (USD)
1+
$0.55000
500+
$0.5445
1000+
$0.539
1500+
$0.5335
2000+
$0.528
2500+
$0.5225
Exquisite packaging
Discount
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Upgrade your power management systems with the IGP01N120H2XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGP01N120H2XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGP01N120H2XKSA1 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3.2 A
- Current - Collector Pulsed (Icm): 3.5 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
- Power - Max: 28 W
- Switching Energy: 140µJ
- Input Type: Standard
- Gate Charge: 8.6 nC
- Td (on/off) @ 25°C: 13ns/370ns
- Test Condition: 800V, 1A, 241Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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