IGT1112M90
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, X-BAND
$1,295.56
Available to order
Reference Price (USD)
1+
$1295.56400
500+
$1282.60836
1000+
$1269.65272
1500+
$1256.69708
2000+
$1243.74144
2500+
$1230.7858
Exquisite packaging
Discount
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Engineered for excellence, the IGT1112M90 RF MOSFET from Integra Technologies Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The IGT1112M90's robust construction ensures long-term reliability even in harsh environments. Choose Integra Technologies Inc.'s IGT1112M90 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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