IHW15N120R2
Infineon Technologies
Infineon Technologies
IGBT 1200V 30A 357W TO247-3
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The IHW15N120R2 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IHW15N120R2 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 15A
- Power - Max: 357 W
- Switching Energy: 900µJ (off)
- Input Type: Standard
- Gate Charge: 133 nC
- Td (on/off) @ 25°C: -/282ns
- Test Condition: 600V, 15A, 14.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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