IHW40N120R3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 80A 429W TO247-3
$0.00
Available to order
Reference Price (USD)
240+
$4.62133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IHW40N120R3FKSA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IHW40N120R3FKSA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
- Power - Max: 429 W
- Switching Energy: 2.02mJ (off)
- Input Type: Standard
- Gate Charge: 335 nC
- Td (on/off) @ 25°C: -/336ns
- Test Condition: 600V, 40A, 7.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
IXYS
IXDA20N120AS
Infineon Technologies
IRGP50B60PD1-EP
Infineon Technologies
IRG7PH37K10D-EPBF
Infineon Technologies
SKP15N60XKSA1
Harris Corporation
IGTM20N40
IXYS
IXBH14N250
IXYS
IXGP7N60BD1
IXYS
IXGH12N60BD1
Infineon Technologies
IRGR4607DTRRPBF
onsemi