IXDA20N120AS
IXYS
IXYS
IGBT 1200V 38A 200W TO263AB
$0.00
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Reference Price (USD)
800+
$3.94895
Exquisite packaging
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Enhance your electronic projects with the IXDA20N120AS Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXDA20N120AS ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXDA20N120AS for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 200 W
- Switching Energy: 3.1mJ (on), 2.4mJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 20A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
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