IHW40N135R3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1350V 80A 429W TO247-3
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Reference Price (USD)
240+
$4.88021
Exquisite packaging
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Optimize your power systems with the IHW40N135R3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IHW40N135R3FKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
- Power - Max: 429 W
- Switching Energy: 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 365 nC
- Td (on/off) @ 25°C: -/343ns
- Test Condition: 600V, 40A, 7.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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