IKA03N120H2XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 8.2A 29W TO220-3
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The IKA03N120H2XKSA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKA03N120H2XKSA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKA03N120H2XKSA1 into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 8.2 A
- Current - Collector Pulsed (Icm): 9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 29 W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 8.6 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): 52 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3-31
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