IKD04N60RAATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 600V 8A TO252-3
$0.58
Available to order
Reference Price (USD)
2,500+
$0.64710
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IKD04N60RAATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKD04N60RAATMA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKD04N60RAATMA1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 75 W
- Switching Energy: 90µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 27 nC
- Td (on/off) @ 25°C: 14ns/146ns
- Test Condition: 400V, 4A, 43Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
Related Products
IXYS
IXYX140N90C3
Infineon Technologies
IHW40N65R5XKSA1
IXYS
IXYH120N65A5
Fairchild Semiconductor
FGPF70N30
STMicroelectronics
STGB10NC60HDT4
Rohm Semiconductor
RGTH60TK65DGC11
Microchip Technology
APT27GA90BD15
Infineon Technologies
IRGP4620DPBF
Microchip Technology
APT68GA60B2D40
Renesas Electronics America Inc