IKP20N60T
Infineon Technologies
Infineon Technologies
IKP20N60 - DISCRETE IGBT WITH AN
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Enhance your electronic projects with the IKP20N60T Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKP20N60T ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKP20N60T for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 41 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
- Power - Max: 166 W
- Switching Energy: 310µJ (on), 460µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 18ns/199ns
- Test Condition: 400V, 20A, 12Ohm, 15V
- Reverse Recovery Time (trr): 41 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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