IKW15N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 1200V 30A TO247-3
$5.77
Available to order
Reference Price (USD)
1+
$5.93000
10+
$5.36200
240+
$4.46158
720+
$3.85440
1,200+
$3.31004
Exquisite packaging
Discount
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The IKW15N120H3FKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKW15N120H3FKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKW15N120H3FKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
- Power - Max: 217 W
- Switching Energy: 1.55mJ
- Input Type: Standard
- Gate Charge: 75 nC
- Td (on/off) @ 25°C: 21ns/260ns
- Test Condition: 600V, 15A, 35Ohm, 15V
- Reverse Recovery Time (trr): 260 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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