NGTB30N135IHRWG
onsemi
onsemi
IGBT TRENCH/FS 1350V 60A TO247
$2.70
Available to order
Reference Price (USD)
1+
$5.54000
30+
$4.73333
120+
$4.12533
510+
$3.53769
1,020+
$3.01079
Exquisite packaging
Discount
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Optimize your power systems with the NGTB30N135IHRWG Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the NGTB30N135IHRWG delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 30A
- Power - Max: 394 W
- Switching Energy: 850µJ (off)
- Input Type: Standard
- Gate Charge: 234 nC
- Td (on/off) @ 25°C: -/250ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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