IKW50N60TFKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
$7.19
Available to order
Reference Price (USD)
1+
$7.11000
10+
$6.47900
240+
$5.45017
720+
$4.81092
1,200+
$4.25506
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKW50N60TFKSA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKW50N60TFKSA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKW50N60TFKSA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333 W
- Switching Energy: 2.6mJ
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): 143 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Microchip Technology
APT40GP90B2DQ2G
onsemi
FGY75T95SQDT
STMicroelectronics
STGB25N40LZAG
onsemi
MGP14N60E
IXYS
MMIX1X100N60B3H1
Infineon Technologies
SGB10N60AATMA1
Renesas Electronics America Inc
RJH6075DPM-N0#T0
IXYS
IXYH16N170CV1
IXYS
IXXP12N65B4D1
Rohm Semiconductor