IMBF170R450M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 9.8A TO263-7
$9.95
Available to order
Reference Price (USD)
1+
$9.95000
500+
$9.8505
1000+
$9.751
1500+
$9.6515
2000+
$9.552
2500+
$9.4525
Exquisite packaging
Discount
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The IMBF170R450M1XTMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IMBF170R450M1XTMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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