IMBG120R140M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 18A TO263
$12.55
Available to order
Reference Price (USD)
1+
$12.55000
500+
$12.4245
1000+
$12.299
1500+
$12.1735
2000+
$12.048
2500+
$11.9225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IMBG120R140M1HXTMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IMBG120R140M1HXTMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
IXYS
IXFK52N100X
STMicroelectronics
STP28N65M2
STMicroelectronics
STP16NF06
Vishay Siliconix
SIRA74DP-T1-GE3
Infineon Technologies
IPB025N08N3GATMA1
Diodes Incorporated
DMT3009LFVW-7
Diodes Incorporated
DMP3017SFK-13
Infineon Technologies
IPT004N03LATMA1
Alpha & Omega Semiconductor Inc.
AOT412
Rohm Semiconductor