IPT004N03LATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 300A 8HSOF
$7.04
Available to order
Reference Price (USD)
2,000+
$2.56025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPT004N03LATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.4mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Alpha & Omega Semiconductor Inc.
AOT412
Rohm Semiconductor
RQ6E035TNTR
Diodes Incorporated
DMN4035L-7
IXYS
IXTP08N120P
Vishay Siliconix
SISA72DN-T1-GE3
Infineon Technologies
IPW65R190CFDFKSA1
STMicroelectronics
STB40NF10LT4
Diodes Incorporated
DMT6030LFDF-7
Infineon Technologies
IPB80P03P4L04ATMA2
Toshiba Semiconductor and Storage