IMBG65R072M1HXTMA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET PG-TO263-
$13.25
Available to order
Reference Price (USD)
1+
$13.25000
500+
$13.1175
1000+
$12.985
1500+
$12.8525
2000+
$12.72
2500+
$12.5875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IMBG65R072M1HXTMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IMBG65R072M1HXTMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Renesas Electronics America Inc
2SK973L-E
Renesas Electronics America Inc
2SJ621-T1B-AT
Renesas Electronics America Inc
RJK4006DPD-00#J2
onsemi
NVTFWS007N08HLTAG
Renesas
HAT2205C-EL-E
onsemi
NVMYS1D6N04CLT1G
Micro Commercial Co
MCB160N04Y-TP
Microchip Technology
APTM100UM60FAG
Diodes Incorporated
DMTH4007LPS-13
Infineon Technologies