IMW120R020M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$39.67
Available to order
Reference Price (USD)
1+
$39.67000
500+
$39.2733
1000+
$38.8766
1500+
$38.4799
2000+
$38.0832
2500+
$37.6865
Exquisite packaging
Discount
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The IMW120R020M1HXKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IMW120R020M1HXKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 3460 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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