IQE008N03LM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH <= 40V PG-TSON-8
$3.06
Available to order
Reference Price (USD)
1+
$3.06000
500+
$3.0294
1000+
$2.9988
1500+
$2.9682
2000+
$2.9376
2500+
$2.907
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IQE008N03LM5ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IQE008N03LM5ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-4
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMT12H060LFDF-7
onsemi
NVMFS6H848NLWFT1G
Rohm Semiconductor
RS6R060BHTB1
Renesas Electronics America Inc
2SJ325-Z-E1-AY
Renesas Electronics America Inc
RJK0351DPA-02#J0
Vishay Siliconix
SI1079X-T1-GE3
Harris Corporation
IRF711
Micro Commercial Co
SI3401AHE3-TP
Toshiba Semiconductor and Storage
TPCP8407,LF
Renesas Electronics America Inc