IMW120R090M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 26A TO247-3
$13.15
Available to order
Reference Price (USD)
1+
$13.15000
500+
$13.0185
1000+
$12.887
1500+
$12.7555
2000+
$12.624
2500+
$12.4925
Exquisite packaging
Discount
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The IMW120R090M1HXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IMW120R090M1HXKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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