IXFN70N120SK
IXYS
IXYS
SICFET N-CH 1200V 68A SOT227B
$129.31
Available to order
Reference Price (USD)
10+
$102.55500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFN70N120SK by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFN70N120SK is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Infineon Technologies
IPL60R199CPAUMA1
Infineon Technologies
BSD316SNH6327XTSA1
onsemi
NTMSD2P102R2SG
IXYS
IXFB132N50P3
Renesas Electronics America Inc
2SK3668-ZK-E1-AY
Microchip Technology
APT10035JFLL
Infineon Technologies
IPD60R1K0PFD7SAUMA1
Infineon Technologies
IRF9328TRPBF
Vishay Siliconix
SIR800ADP-T1-GE3
onsemi