IMW65R048M1HXKSA1
Infineon Technologies
Infineon Technologies
MOSFET 650V NCH SIC TRENCH
$18.45
Available to order
Reference Price (USD)
1+
$18.45000
500+
$18.2655
1000+
$18.081
1500+
$17.8965
2000+
$17.712
2500+
$17.5275
Exquisite packaging
Discount
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Enhance your electronic projects with the IMW65R048M1HXKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IMW65R048M1HXKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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