IMW65R057M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$15.77
Available to order
Reference Price (USD)
1+
$15.77000
500+
$15.6123
1000+
$15.4546
1500+
$15.2969
2000+
$15.1392
2500+
$14.9815
Exquisite packaging
Discount
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The IMW65R057M1HXKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IMW65R057M1HXKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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