IMW65R072M1HXKSA1
Infineon Technologies
Infineon Technologies
MOSFET 650V NCH SIC TRENCH
$13.91
Available to order
Reference Price (USD)
1+
$13.91000
500+
$13.7709
1000+
$13.6318
1500+
$13.4927
2000+
$13.3536
2500+
$13.2145
Exquisite packaging
Discount
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Optimize your power electronics with the IMW65R072M1HXKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IMW65R072M1HXKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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