IMZ120R090M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 26A TO247-4
$15.13
Available to order
Reference Price (USD)
1+
$15.13000
500+
$14.9787
1000+
$14.8274
1500+
$14.6761
2000+
$14.5248
2500+
$14.3735
Exquisite packaging
Discount
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The IMZ120R090M1HXKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IMZ120R090M1HXKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-1
- Package / Case: TO-247-4
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