IMZA120R007M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$108.08
Available to order
Reference Price (USD)
1+
$108.08000
500+
$106.9992
1000+
$105.9184
1500+
$104.8376
2000+
$103.7568
2500+
$102.676
Exquisite packaging
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Meet the IMZA120R007M1HXKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IMZA120R007M1HXKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 47mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
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