G3035L
Goford Semiconductor
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the G3035L by Goford Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G3035L stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Goford Semiconductor.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IQE050N08NM5ATMA1
Renesas Electronics America Inc
NE5550779A-T1A-A
Diodes Incorporated
DMN2058U-7
Rohm Semiconductor
RS6G120BGTB1
Diodes Incorporated
DMP3045LFVW-13
Infineon Technologies
BSC016N06NSSCATMA1
Vishay Siliconix
SQD45P03-12-T4_GE3
Diodes Incorporated
DMP3011SFVWQ-13
Diodes Incorporated
DMT30M9LPS-13
Renesas Electronics America Inc