IMZA120R020M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$42.02
Available to order
Reference Price (USD)
1+
$42.02000
500+
$41.5998
1000+
$41.1796
1500+
$40.7594
2000+
$40.3392
2500+
$39.919
Exquisite packaging
Discount
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Upgrade your designs with the IMZA120R020M1HXKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IMZA120R020M1HXKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 3460 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
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