IPA029N06NXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 84A TO220-FP
$3.68
Available to order
Reference Price (USD)
500+
$1.76330
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPA029N06NXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPA029N06NXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 84A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXFH36N50P
Infineon Technologies
IRF5210STRLPBF
IXYS
IXFQ28N60P3
Diodes Incorporated
DMT15H067SSS-13
Alpha & Omega Semiconductor Inc.
AOT296L
IXYS
IXFK48N60Q3
Infineon Technologies
IPA65R190C7
Fairchild Semiconductor
SSU1N60BTU
Infineon Technologies
IPD380P06NMATMA1
Diodes Incorporated