IPD380P06NMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 35A TO252-3
$2.68
Available to order
Reference Price (USD)
1+
$2.68000
500+
$2.6532
1000+
$2.6264
1500+
$2.5996
2000+
$2.5728
2500+
$2.546
Exquisite packaging
Discount
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The IPD380P06NMATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPD380P06NMATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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