IPA320N20NM3SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 26A TO220
$1.73
Available to order
Reference Price (USD)
1+
$1.72894
500+
$1.7116506
1000+
$1.6943612
1500+
$1.6770718
2000+
$1.6597824
2500+
$1.642493
Exquisite packaging
Discount
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Upgrade your designs with the IPA320N20NM3SXKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPA320N20NM3SXKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 4V @ 89µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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