IPAW70R600CEXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 10.5A TO220-31
$1.07
Available to order
Reference Price (USD)
450+
$0.94022
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPAW70R600CEXKSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
AUIRFZ44NS
Diodes Incorporated
DMTH4014SPSWQ-13
Renesas Electronics America Inc
RJK6012DPP-00#T2
Infineon Technologies
SPW11N60C3
Fairchild Semiconductor
FDI9406-F085
Infineon Technologies
IPL65R340CFDAUMA1
Rohm Semiconductor
R6004ENX
Diodes Incorporated
DMN1032UCB4-7
Vishay Siliconix
SIHG47N60E-GE3
Diodes Incorporated