IPB050N10NF2SATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V
$1.29
Available to order
Reference Price (USD)
1+
$1.28520
500+
$1.272348
1000+
$1.259496
1500+
$1.246644
2000+
$1.233792
2500+
$1.22094
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPB050N10NF2SATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPB050N10NF2SATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Diodes Incorporated
DMTH3004LPSQ-13
Renesas
RJK5012DPP-MG#T2
Microchip Technology
APTM50UM13SAG
onsemi
6LN04MH-TL-E
Harris Corporation
RFP7N35
onsemi
SFT1446-TL-H-ON
Harris Corporation
IRFP362
Vishay Siliconix
SIHA22N60EF-GE3
Renesas Electronics America Inc
2SK2111-T1-AZ
Renesas Electronics America Inc