IPB180N10S402ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
$7.21
Available to order
Reference Price (USD)
1,000+
$3.28544
2,000+
$3.12117
Exquisite packaging
Discount
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The IPB180N10S402ATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPB180N10S402ATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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