IPB330P10NMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO263-3
$6.25
Available to order
Reference Price (USD)
1+
$6.25000
500+
$6.1875
1000+
$6.125
1500+
$6.0625
2000+
$6
2500+
$5.9375
Exquisite packaging
Discount
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Upgrade your designs with the IPB330P10NMATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPB330P10NMATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Infineon Technologies